While the industry is starting to transition to 3D or V-NAND, planar NAND is still very much relevant and Samsung’s 16nm process is their latest. As the 850 and 850 EVO demonstrated, V-NAND carries a strong speed benefit over planar NAND, leading to better performance. Plain old TLC drives like the 840 tended to be slower than their MLC counterparts. Despite this, the use of the familiar SLC cache allows the 750 EVO manages to mask most of the performance differences compared to V-NAND, allowing it to match the 850 EVO in short, bursty workloads.
Still, a heavier workload would likely overwhelm the SLC cache and cause performance to drop to TLC levels. Other noteworthy specifications include the dual core MGX controller, 256MB of DDR3 cache and improved LDPC ECC and 256Gbit dies. Overall, by releasing a 16nm planar NAND based SSD will help Samsung develop and prepare for the day when 3D-NAND scales down to 16nm or even lower. Hopefully, the 750 EVO won’t inherit the read speed issue faced by the 840 EVO and the still unfixed 840.